Methods and apparatus for writing nonvolatile 3D NAND flash memory using multiple-page programming

ABSTRACT

Methods and apparatus for writing nonvolatile 3D NAND flash memory using multiple-page programming. A method is provided for multiple-page programming of an array having a block that includes page groups and each page group includes cell strings that form pages. The method includes deactivating drain select gates (DSGs) and source select gates (SSG), applying a programming voltage to a selected word line, and applying a middle high voltage to unselected word lines. The method also includes repeating multiple programming operations while maintaining the word line voltage levels from a first programming operation to a last programming operation. Each programming operation includes loading data onto bit lines and pulsing a drain select gate associated with a selected page group to load the data into a selected page of the selected page group.

PRIORITY

This application is a continuation in part (CIP) of U.S. patent application Ser. No. 14/846,673, filed on Sep. 4, 2015, and entitled “Methods and Apparatus for Writing Nonvolatile Memory Using Multiple-Page Programming. The application Ser. No. 14/846,673 claims the benefit of priority based upon U.S. Provisional Patent Application Ser. No. 62/046,902, filed on date Sep. 6, 2014 and entitled “NAND Flash Memory with Multiple-Page Programming,” which is hereby incorporated herein by reference in its entirety.

This application claims the benefit of priority based upon U.S. Provisional Patent Application Ser. No. 62/617,220, filed on Jan. 13, 2018 and entitled “3D NAND Flash Memory with Multiple-Page Programming,” which is hereby incorporated herein by reference in its entirety.

This application claims the benefit of priority based upon U.S. Provisional Patent Application Ser. No. 62/628,275, filed on Feb. 8, 2018 and entitled “3D NAND/DRAM Array with Multi-Page Read and Write Operations,” which is hereby incorporated herein by reference in its entirety.

FIELD OF THE INVENTION

The exemplary embodiment(s) of the present invention relates to the field of semiconductor and integrated circuits. More specifically, the exemplary embodiment(s) of the present invention relates to nonvolatile memory devices.

BACKGROUND OF THE INVENTION

Nonvolatile memory, such as NAND or NOR based flash memory, is widely used in today's technology world. Its unique cell and array structure provide a small cell size, high density, low write current, and higher data throughout. Nonvolatile memory such as NAND based flash memory becomes major storage memory for various devices and systems, such as memory cards, USB flash drives, and solid-state drives. Some exemplary applications of flash memory include personal computers, PDAs, digital audio players, digital cameras, mobile phones, synthesizers, video games, scientific instrumentation, industrial robotics, and medical electronics. NAND flash memory technology, for example, has reached 16 nanometers (“nm”), and its single-chip density can reach 128 gigabit (“Gb”) storage capacity.

A problem, however, associated with conventional NAND based flash memory is that it has a relatively slow programming speed. A reason for a slow programming speed and/or erasing speed is that a conventional NAND flash memory performs single-page programming. For some applications, a slow programming and/or erasing speed in a nonvolatile memory storage becomes a limitation and/or drawback.

SUMMARY

In various exemplary embodiments, methods and apparatus are provided for writing nonvolatile memory using multiple-page programming.

In an exemplary embodiment, a method is provided for multiple-page programming of a 3D NAND flash memory array having a block that includes a plurality of page groups and each page group includes a plurality of cell strings that form a plurality of pages. The method comprises deactivating drain select gates (DSGs) and source select gates (SSG) of the block, applying a programming voltage to a selected word line that is coupled to a selected page in each page group, and applying an inhibit middle high voltage to unselected word lines that are coupled to other pages in each page group. The method also comprises repeating multiple programming operations while maintaining the word line voltage levels from a first programming operation to a last programming operation. The multiple programming operations program a selected page in each of two or more page groups, respectively. Each programming operation comprises loading data onto bit lines coupled to the page groups, and pulsing a drain select gate (DSG) associated with a selected page group to begin programming the data on the bit lines into the selected page of the selected page group.

In an exemplary embodiment, a nonvolatile memory device is provided that comprises a 3D NAND flash memory array having a block that includes a plurality of page groups and each page group includes a plurality of cell strings that form a plurality of pages. The device also comprises a decoder coupled to the block and configured to provide multiple-page programming by performing operations of deactivating drain select gates (DSGs) and source select gates (SSG) of the block, applying a programming voltage to a selected word line that is coupled to a selected page in each page group, applying an inhibit middle high voltage to unselected word lines that are coupled to other pages in each page group. The decoder also preforms operations of repeating multiple programming operations while maintaining the word line voltage levels from a first programming operation to a last programming operation. The multiple programming operations program a selected page in each of two or more page groups, respectively, and each programming operation comprises loading data onto bit lines coupled to the page groups, and pulsing a drain select gate (DSG) associated with a selected page group to begin programming the data on the bit lines into the selected page of the selected page group.

In an exemplary embodiment, a method is provided for multiple-page programming of a 3D NAND flash memory array having a block that includes a plurality of page groups and each page group includes a plurality of cell strings that form a plurality of pages. The method comprises applying a programming voltage to a selected word line and an inhibit middle high voltage to unselected word lines, pulsing a first drain select gate associated with a first page group to begin programming bit line data into a page of the first page group that is connected to the selected word line, pulsing a second drain select gate associated with a second page group to begin programming bit line data into a page of the second page group that is connected to the selected word line, and maintaining the word line voltage levels associated with the first and second page groups beginning from the pulsing the first drain select gate to the pulsing of the second drain select gate.

Additional features and benefits of the present invention will become apparent from the detailed description, figures and claims set forth below.

BRIEF DESCRIPTION OF THE DRAWINGS

The exemplary embodiment(s) of the present invention will be understood more fully from the detailed description given below and from the accompanying drawings of various embodiments of the invention, which, however, should not be taken to limit the invention to the specific embodiments, but are for explanation and understanding only.

FIG. 1 is a block diagram illustrating a nonvolatile memory array 100 capable of programming multiple pages simultaneously in accordance with one embodiment of the present invention;

FIG. 2 is a block diagram illustrating nonvolatile memory device able to program and/or erase multiple half pages at a given time in accordance with one embodiment of the present invention;

FIG. 3 is a block diagram illustrating a layout of a NAND flash memory array able to provide a multiple-page programming scheme in accordance with one embodiment of the present invention;

FIG. 4 is a block diagram illustrating a more detailed view of an X-decoder for addressing NAND flash memory array in accordance with one embodiment of the present invention;

FIG. 5 is a block diagram illustrating an exemplary page buffer array in accordance with one embodiment of the present invention;

FIG. 6 is a block diagram 600 illustrating a NAND flash memory array for vertical blocks and horizontal blocks in accordance with one embodiment of the present invention;

FIG. 7 is a block diagram illustrating an exemplary NAND flash memory array adding bit line capacitors in accordance with one embodiment of the present invention;

FIGS. 8-11B are clock waveform diagrams illustrating MPS operations in accordance with one embodiment of the present invention;

FIG. 12 is a flow chart illustrating a process for an MPS in accordance with one embodiment of the present invention;

FIG. 13 is a flow chart illustrating an alternative process of MPS in accordance with one embodiment of the present invention;

FIG. 14 is a flow chart illustrating an alternative process of MPS in accordance with one embodiment of the present invention;

FIG. 15 is a flow chart illustrating another alternative example of an MPS operation in accordance with one embodiment of the present invention;

FIG. 16 shows an exemplary embodiment of one block of a 3D NAND flash memory array;

FIG. 17 shows exemplary programming operations to program the 3D NAND flash memory block shown in FIG. 16;

FIG. 18 shows exemplary programming operations to program the 3D NAND flash memory block shown in FIG. 16;

FIG. 19 shows an exemplary embodiment of a 3D NAND flash memory array that includes multiple blocks;

FIG. 20 shows an exemplary embodiment of a 3D NAND flash memory array that provides multiple-page programming of MLC strings; and

FIGS. 21A-B show exemplary embodiments of a 3D NAND flash memory array architectures having a page buffer for data input and output.

DETAILED DESCRIPTION

Exemplary embodiment(s) of the present invention is described herein in the context of a method, device, and apparatus for writing nonvolatile flash memory using multiple-page programming.

Those of ordinary skilled in the art will realize that the following detailed description of the present invention is illustrative only and is not intended to be in any way limiting. Other embodiments of the present invention will readily suggest themselves to such skilled persons having the benefit of this disclosure. Reference will now be made in detail to implementations of the exemplary embodiments of the present invention as illustrated in the accompanying drawings. The same reference indicators (or numbers) will be used throughout the drawings and the following detailed description to refer to the same or like parts.

In accordance with the embodiment(s) of present invention, the components, process steps, and/or data structures described herein may be implemented using various types of operating systems, computing platforms, computer programs, and/or general purpose machines. Where a method comprising a series of process steps is implemented by a computer or a machine and those process steps can be stored as a series of instructions readable by the machine, they may be stored on a tangible medium such as a computer memory device (e.g., ROM (Read Only Memory), PROM (Programmable Read Only Memory), EEPROM (Electrically Erasable Programmable Read Only Memory), FLASH Memory, Jump Drive, and the like), magnetic storage medium (e.g., tape, magnetic disk drive, and the like), optical storage medium (e.g., CD-ROM, DVD-ROM, paper card and paper tape, and the like) and other known types of program memory.

Those of ordinary skills in the art will now realize that the devices described herein may be formed on a conventional semiconductor substrate or they may as easily be formed as a thin film transistor (TFT) above the substrate, or in silicon on an insulator (SOI) such as glass (SOG), sapphire (SOS), or other substrates as known to those of ordinary skills in the art. Such persons of ordinary skills in the art will now also realize that a range of doping concentrations around those described above will also work. Essentially, any process capable of forming pFETs and nFETs will work. Doped regions may be diffusions or they may be implanted.

The term “system” is used generically herein to describe any number of components, elements, sub-systems, devices, packet switch elements, packet switches, routers, networks, computer and/or communication devices or mechanisms, or combinations of components thereof. The term “computer” is used generically herein to describe any number of computers, including, but not limited to personal computers, embedded processors and systems, control logic, ASICs, chips, workstations, mainframes, etc. The term “device” is used generically herein to describe any type of mechanism, including a computer or system or component thereof. The terms “task” and “process” are used generically herein to describe any type of running program, including, but not limited to a computer process, task, thread, executing application, operating system, user process, device driver, native code, machine or other language, etc., and can be interactive and/or non-interactive, executing locally and/or remotely, executing in foreground and/or background, executing in the user and/or operating system address spaces, a routine of a library and/or standalone application, and is not limited to any particular memory partitioning technique. The steps, connections, and processing of signals and information illustrated in the figures, including, but not limited to the block and flow diagrams, are typically performed in a different serial or parallel ordering and/or by different components and/or over different connections in various embodiments in keeping within the scope and spirit of the invention.

One embodiment of the present invention discloses a method of storing information in a nonvolatile memory device and system. The method, in one aspect, includes activating a first drain select gate (“DSG”) signal, loading first data from a bit line (“BL”) to a nonvolatile memory page of a first memory block in response to activation of the first DSG signal during a first clock cycle, deactivating the first DSG signal and activating a second DSG signal, loading second data from the BL to a nonvolatile memory page, and writing the second data to a nonvolatile memory cell in the nonvolatile memory page of the second memory block. The method functions to load multiple pages of data into different blocks and then programs multiple selected word lines simultaneously. The system can include an array of flash memory cells, a set of bit lines, a set of word lines and multiple block decoders coupled to multiple blocks.

FIG. 1 is a block diagram illustrating a nonvolatile memory array 100 capable of programming multiple pages simultaneously in accordance with one embodiment of the present invention. The array 100 includes a page buffer 110 and multiple blocks, such as block 0 (“BLK0”), block 1 (“BLK1”), and block m (“BLKm”). Each block of memory is further arranged into multiple memory pages. The nonvolatile memory, in one aspect, can be NAND based flash memory, NOR based flashed memory, phase-changing memory (“PCM”), EEPROM (erasable programmable read-only memory), or a combination of NAND, NOR, PCM, and/or EEPROM memory. To simplify forgoing discussion, NAND based flash memory is used as an exemplary nonvolatile memory throughout the specification. It should be noted that the underlying concept of the exemplary embodiment(s) of the present invention would not change if one or more blocks (or devices) were added to or removed from diagram 100.

The NAND flash memory array, for example, is organized with multiple memory blocks wherein each block is further divided into multiple pages. An exemplary NAND flash memory array includes 32 to 256 blocks of memory wherein each page has a range from 16 kilobit (“Kb”) to 256 Kb of memory space. During an erase cycle, the NAND flash memory resets one block memory at one time. For example, the flash memory sets nonvolatile memory cells of a block to a clean state such as all cells are set to logic “1”. NAND flash memory based on Floating Gate (FG) technology, Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) technology, or any other Charge-Trapping technology. The memory, in one example, can be configured in two-dimensional (2D) and/or three-dimensional (3D) array structure. During a write or program cycle, the NAND flash memory writes or programs one page at a time. It should be noted that the programming cycle and erasing cycle are generally slow comparing with logic operations. For example, the block-erase operation and/or the page-program operation can take anywhere from 0.5 to 2 milliseconds (“ms”). During writing and easing operations, the NAND flash memory uses relatively high voltages such as 18-20V to erase and/or to program the NAND flash memory cells. The speed of erasing and/or programming nonvolatile memory cell may vary depending on the variation of voltages. It should be noted that higher voltage can degrade device performance which often results in low endurance cycles.

Referring back to FIG. 1, a nonvolatile memory device which contains a NAND flash memory array 100 includes an array of flash memory cells organized in multiple blocks such as BLK0-BLKm, a set of bit lines (“BLs”) 120, and page buffer 110. Each block is further arranged pages such as pages such as pages 111 or 113. The set of BLs are used to couple between the multiple blocks and the page buffer 110. In one example, BLs are used to load data from the page buffer 110 to flash memory cells in one or more pages within one or more blocks such as page 112 of block BLK1.

The NAND flash memory array 100 further includes a set of word lines (“WLs”) and one or more block decoders, not shown in FIG. 1. WLs are used to couple to the pages for addressing where the data should be stored in the flash memory cell(s). The block decoders which are coupled to the blocks wherein multiple block decoders can be activated concurrently to write the data to multiple pages situated in different blocks during an operation of multiple-page programming scheme (“MPS”).

During the MPS operation, the first set of data in the page 110, for example, is loaded into page 111 of block BLK0 via BLs 120 during a first clock cycle. Once the first data is present in page 111, the WLs are activated during a second clock cycle. A process of programming flash memory cells in page 111 subsequently begins in accordance with the first data. When the first data is trapped in the page 111, the connections between BLs 120 and the page 111 are switched off during a third clock cycle. The connections between BLs 120 and the page 112 of block BLK1 are subsequently switched on, and the second data in the page 110 is loaded into the page 112 at the following clock cycle. As soon as the second data is present in the page 112, the WLs are activated and a process of programming flash memory cells in the page 112 in accordance with the second data begins. Once the second data is trapped in the page 112, the connections between BLs 120 and the page 112 is deactivated. During the MPS operation, multiple pages within different blocks can be programmed concurrently.

An advantage of using MPS is that the MPS is capable of writing or programming multiple pages in different blocks concurrently whereby the overall programming speed is enhanced. For instance, the MPS writes/programs the multiple pages 111-113 simultaneously whereby the overall writing/programming time is shortened. It should be noted that the MPS within the NAND flash memory array 100 can be used in computing systems, network devices, personal computers (“PCs”), tablets, smart phones, servers, mainframes, routers, switches, and the like.

FIG. 2 is a block diagram 200 illustrating nonvolatile memory device able to program and/or erase multiple half pages at a given time in accordance with one embodiment of the present invention. Diagram 200 includes a nonvolatile memory array 202, a selection switch 211, and a page buffer 210. The nonvolatile memory array, in one embodiment, is an NAND flash array having multiple blocks such as BLK0-BLKm. It should be noted that the underlying concept of the exemplary embodiment(s) of the present invention would not change if one or more blocks (or devices) were added to or removed from diagram 200.

In one aspect, the NAND flash array 202 is designed so that a data loading scheme operates the page buffer 210 to load different data to the two half-pages 212, 213 through the selection switch 211. The selection switch 211 which includes at least two transistors controls the time and the data to be written to selected pages or half pages. Alternatively, the switch 211 can have more than two sets of switches, such as 4 or 8 for example, to perform ¼ or ⅛ page programming. Note that writing or programming multiple half-pages in different blocks simultaneously or concurrently can improve overall writing/programming speed.

During an MPS, the first set of data in the page 210, for example, is loaded into page 208 of block BLK0 via selection switch 211 which controls BLs. Once the first data is present at page 208, various WLs are activated and a process of programming flash memory cells in page 208 begins. When the first data is trapped in the page 208, the connections between the page buffer 210 and page 208 are switched off. The connections between page buffer 210 and the page 214 of block BLK1 are subsequently switched on. The second data at the page buffer 210 is loaded into the page 214. When the second data is present in the page 214, the WLs are activated and a process of programming flash memory cells in the page 214 begins while the programming process to page 208 is still active. Once the second data is trapped in the page 214, the connections between buffer page 210 and the page 214 is deactivated. During the MPS, multiple pages within different blocks are programmed concurrently.

FIG. 3 is a block diagram illustrating a layout of a NAND flash memory array 300 able to provide a multiple-page programming scheme in accordance with one embodiment of the present invention. The array 300 includes multiple blocks 301 (BLK0)-302 (BLKm), word lines 303 (WL0:0-n)-304 (WLm:0-n), bit lines 305 (BL0)-306 (BLk), a page buffer array 320, and an X-decoder 330. It should be noted that the underlying concept of the exemplary embodiment(s) of the present invention would not change if one or more blocks (or components) were added to or removed from the NAND flash memory array 300.

In one embodiment, each block 301 (BLK0) or 302 (BLKm) includes multiple cells or cell strings 310 organized in a set of serial strings. Each block 301 (BLK0)-302 (BLKm) can include multiple word lines 303A (WL0)-303B (WLm). The gates or transistors of the cell strings 310 are connected to the word lines 303A (WL0)-303B (WLm). The cell strings 310, for example, connect to the bit lines 305 (BL0)-306 (BLk) through a drain select gate (DSG) such as DSG 107. The cell string 310 also connects to a source line (SL) through a source select gate, SL 309 and SSG 308.

The page buffer array 320 includes a switching circuit 321, a page buffer 322, multiple data caches 323-324, and Y-decoder 325. The bit lines 305 (BL0)-306 (BLk) are connected to the switching circuit 321. The switching circuit 321 can choose a portion of bit lines 305 (BL0)-306 (BLk) to connect to the page buffer 322. In an alternative embodiment, the page buffer array 320 does not include the switching circuit 321. For example, the entire bit lines 305 (BL0)-306 (BLk) can connect to the page buffer 322.

The data caches 323-324, in one aspect, are used for page buffer backups. For example, to setup MPS, loading data to each page of a block is carried out quickly whereby a set of caches can be helpful to reload page buffer quickly for each page. It should be noted that the cache can be static random-access memory (“SRAM”) based, or dynamic random-access memory (“DRAM”) based memory device.

The X-decoder 330 (also called XDEC, WL-decoder or row-decoder) includes a page decoder 332 and multiple block decoders 333-334. In an embodiment, the word lines 303 (WL0:0-n)-304 (WLm:0-n), the drain select gates DSG0-DSGm, the source select gates SSG0-SSGm, and the source lines SL0-SLm all connect to the X-decoder 330. In an alternative embodiment, the source lines SL0-SLm of each block BLK0-BLKm can be connected in common. In yet another embodiment, the source select gates SSG0-SSGm of each block BLK0-BLKm can be connected in common.

In one embodiment, a nonvolatile memory device 300 includes an array of NAND bases flash memory cells, BLs 305-306, WLs 303-304, and multiple block decoders 333-334. The array of flash memory cells organized in multiple blocks 301-302, wherein each of the multiple blocks is further arranged in pages such as page 350. The blocks, in one example, are arranged in arrays wherein each block contains a set of flash memory cell strings. Each string, in one aspect, is a page. The flash memory cells can be NAND based flash memory cells. Alternatively, the flash memory cells are p-channel metal-oxide-semiconductor (“PMOS”) based flash memory cells.

BLs are coupled to the blocks 301-302 configured to provide data to at least a portion of flash memory cells across the blocks. A set of WLs are used to facilitate addressing at least a portion of the flash memory cells. The block decoders such as block decoders 333-334 are coupled to the blocks 301-304 wherein each of the block decoders are assigned to a corresponding block for block enablement. In one aspect, two or more the multiple block decoders 301-302 are able to simultaneously turn on multiple word lines in multiple blocks during the MPS. The page decoder 332, in one embodiment, includes block decoder enable (“BDE”) lines wherein each of the BDE lines is assigned to one of the block decoders 333-334 for driving the set of WLs. In one example, a BDE line can be activated independent from the other BDE lines. Multiple BDE lines can be activated at the same time during the MPS.

Each string of nonvolatile memory cells, in one embodiment, includes a capacitor, not shown in FIG. 3. The capacitor can be used to temporarily store trapped data for the MPS. In one aspect, to preserve data integrity for the trapped data or loaded data from the page buffer, a capacitor is added to the string of NAND based memory cell can prolong the data at the string whereby the data can be correctly written to the nonvolatile memory cells.

During the MPS, after activating DSG0, the data at BLs 305-306 is loaded from page buffer to a page in block 301. Once the data is present at the page channel or memory string such as string 350, the DSG0 is deactivated which logically disconnects the BLs 305-306 from block 301. While data in block 301 is being written into the nonvolatile memory cells, DSG1 is activated and the data at BLs 305-306 is loaded to a page in the next block such as block 1 BLK1, not shown in FIG. 3. As soon as the data is present at BLK1, the writing process begins while the writing process for block 301 is still going.

Alternatively, page buffer array 320 write multiple pages of data in different blocks in a sequence. After the data is trapped in the pages in the different blocks, WLs to the blocks are activated to begin the programming or writing phase simultaneously. The writing or programming speed improves 100% if two pages can be programmed at the same time.

FIG. 4 is a block diagram 400 illustrating a more detailed view of an X-decoder 450 for addressing a NAND flash memory array in accordance with one embodiment of the present invention. Diagram 400, which is similar to device 330 shown in FIG. 3, includes a page decoder 401, multiple block decoders 402-403, and multiple high voltage transistors 404-409. The multiple block decoders 402-403 are controlled or activated by a set of control signals ENBLK0-ENBLKm. ENBLK0 is referred to as Enabling Block Zero (0) and ENBLKm is referred to as Enabling Block m, where m can be any integers. Bus lines (or vertical world line) VWL0-VWLn of the page decoder 401 are coupled with the multiple high voltage transistors 404-409. The multiple high voltage transistors 404-409 are coupled with the word lines WL0-WLm of blocks BLK0-BLKm. It should be noted that the underlying concept of the exemplary embodiment(s) of the present invention would not change if one or more blocks (or components) were added to or removed from the diagram 400.

In one embodiment the multiple high voltage transistors 404-409 are NMOS high voltage transistors capable of handling high voltages such as 15 to 25 volts (“V”) for programming and/or erasing data in the nonvolatile memory cells. The high voltage transistor 404-409 gates are also connected to a corresponding local block decoder 402-403 to pick and choose which memory cells need to be reprogrammed. While the source terminals of high voltage transistor 404-409 are connected to the bus lines VWL0-VWLn, the drain terminals of high voltage transistor 404-409 are connected to WLs of NAND flash memory array.

In an embodiment, the word lines (WL0:0-n)-(WLm:0-n), the drain select gates DSG0-DSGm, the source select gates SSG0-SSGm, and the source lines SL0-SLm are configured to connect to the X-decoder 400. Note that the letters “m” and “n” can be any integer numbers. In an alternative embodiment, the source lines SL0-SLm of each block BLK0-BLKm can be connected in common. In yet another embodiment, the source select gates SSG0-SSGm of each block BLK0-BLKm can be connected in common. Because the blocks such as BLK0-BLKm share the same page decoder 401, multiple selected word lines of the X-decoder 450 can be at the same location.

In another embodiment, the X-decoder 450 includes circuits to select different locations of the word line WL0-WLm in different blocks BLK0-BLKm. In an exemplary embodiment, each word line WL0-WLm can include a high voltage latch (not shown) or other circuit having a latch function. The high voltage latch (not shown) receives power supply from the block decoders 402-403. In an embodiment, the block decoders 402-403 can also include a high voltage latch (not shown). In operation, the local latch (not shown) and block latch (not shown) are set to a high or low voltage, also known as select or unselect voltage. The local latch provides a Vpgm (program voltage) or Vpass (pass voltage) signal to the word lines WL0-WLm of the selected block BLK0-BLKm, and/or provides 0V or floating to the unselected blocks BLK0-BLKm. The waveforms associated to the word lines WL0-WLm will be further discussed in FIG. 8-FIG. 11B.

A function of X-decoder 450 is to turn on multiple block decoders such BLK-Dec 402 and 403 concurrently to program data in multiple pages in different blocks during a multiple-page programming scheme (“MPS”). To erase or program nonvolatile memory cells in multiple pages and/or blocks, X-decoder 450, in one example, turns on selected pages and/or blocks and drives selected WLs to program voltages to multiple pages and/or blocks.

FIG. 5 is a block diagram 500 illustrating an exemplary page buffer array in accordance with one embodiment of the present invention. Diagram 500, which is similar to device 320 shown in FIG. 3, includes a page buffer 501, multiple data caches 502-503, and a Y-decoder 505. In an alternative embodiment, the page buffer array includes a switching circuit (not shown). While the inputs of page buffer 501 are coupled to the multiple data caches 502-503, the outputs of page buffer 501 are fed to a nonvolatile memory array. It should be noted that the underlying concept of the exemplary embodiment(s) of the present invention would not change if one or more blocks (or devices) were added to or removed from diagram 500.

The data caches 502-504, in one example, include latches or SRAM memory circuits to enhance storage capacity as well as faster replenishing data to page buffer 501. The multiple data caches 502-504 provide a reduced circuit area over using multiple full featured page buffers. The data caches 502-504 can be configured with various different types of memory circuitry, such as embedded SRAM, embedded DRAM, 1T-SRAM, and the like.

During the MPS operation, data stored in the data caches 502-503 can be transferred to the page buffer 501 page-by-page and then loaded into each selected block BLK0-BLKm as described herein. It should be noted that the operation time for page buffer 501 and data caches such as 502-503 are in nanoseconds (“ns”) range while operation time for erase and write (program) data in nonvolatile memory cells are in milliseconds range. Since the trapped data at the NAND flash memory cell string can take hundreds milliseconds to dissipate, the page buffer 501 should have sufficient time to load multiple pages of data into different pages in different blocks before activating the programming cycle.

In an alternative embodiment, the page buffer array includes two or more page buffers 501 and/or data caches 502-504. The two or more groups of the page buffer 501 and data caches 502-504 can be located on top and bottom of the array, thereby relaxing the layout pitch. Alternatively, the data caches 502-504 can locate anywhere in the chip or die to feed multiple page data into the page buffer 501. Multiple data caches 502-504 can also be used to load the multiple page data to the selected blocks BLK0-BLKm for parallel programming as described herein. For example, the page buffer array includes a single-page buffer structure (not shown). An external system can continue loading multiple page data into the single-page buffer structure (not shown) and apply voltages signals to the selected block BLK0-BLKm page-by-page. Then the multiple-page programming for the multiply selected pages can begin as described herein.

During a program-verify phase, the data of the data caches 502-504 can be transferred to the single-page buffer structure (not shown) again, page-by-page. The corresponding word line WL0-WLm of the page is read by predetermined word line voltages to check a cell's Vt. The data is used to reset the single-page buffer structure (not shown) to the new data required for a next programming, and then the data is transferred back to the data caches 502-504 for the next program pulse.

FIG. 6 is a block diagram illustrating a NAND flash memory array 600 for vertical blocks and horizontal blocks in accordance with one embodiment of the present invention. The NAND flash memory array 600 provides a configuration of multiple blocks in both a horizontal direction and a vertical direction that can be loaded with different data and programmed simultaneously. The NAND flash memory array 600 includes blocks 601 (BLK0)-602 (BLKk), blocks 603 (BLKm)-604 (BLKm+k), switching circuit 605 and page buffer 606. The blocks 601 (BLK0)-602 (BLKk) are located in a vertical direction (bit line direction), whereas the blocks 603 (BLKm)-604 (BLKm+k) are located in the horizontal direction (word line direction). It should be noted that the underlying concept of the exemplary embodiment(s) of the present invention would not change if one or more blocks (or devices) were added to or removed from the array 600. The switching circuit 605 is configured to select one bit line from the multiple bit lines BL0-BLk to connect with the page buffer 606.

In operation, during writing/programming, bit line voltages to the cell strings of blocks 601 (BLK0)-602 (BLKk), and 603 (BLKm)-604 (BLKm+k) can be loaded. A selected bit line BL0-BLk can be applied with a 0V or VDD signal from the page buffer 606. The unselected bit lines BL0-BLk can be applied with an inhibit voltage signal such as VDD from a VINH bus. VDD can also be referred to as Vdd. After a DSG0 goes low to isolate the blocks 601 (BLK0)-602 (BLKk), the bit lines BL0-BLk can be applied with the next page of data and DSGm can be activated high to load bit line voltages into blocks 603 (BLKm)-604 (BLKm+k).

FIG. 7 is a block diagram 700 illustrating an exemplary NAND flash memory array adding bit line capacitors in accordance with one embodiment of the present invention. Bit line capacitors can be added to each bit line to increase data holding time of the bit line voltages during the MPS operation. Diagram 700, which is similar to the device 300 shown in FIG. 3, includes enable transistors 710-712, and bit line capacitors 714-716. The bit lines BL0-BLk of the array are coupled to bit line capacitors 714-716. The enable transistors 710-712 are coupled to the source nodes of the bit line capacitors 714-716. In an embodiment, the enable transistors 710-712 are NMOS transistors. The NMOS transistors may also be replaced by PMOS or P-N-pair transistors to improve holding capability for both 0V and VDD signals. The bit line capacitors 714-716 include any type of capacitors such as PIP (Poly-Interpoly-Poly) capacitors, MIM (Metal insulator Metal) capacitors, NMOS capacitors, PMOS capacitors, and the like.

In one operation, during bit line voltage loading, a control signal EN can be driven high to turn on the enable transistors 710-712. The turn-on enable transistors 710-712 function to add the bit line capacitors 714-716 to the bit lines BL0-BLk. During a read operation, the signal EN can be driven low to turn off the enable transistors 710-712, thereby allowing the source of the bit line capacitors 714-716 to become floating.

FIG. 8 is a clock waveform diagram 800 illustrating an MPS operation in accordance with one embodiment of the present invention. The clock waveform diagram 800 illustrates a bit line waveform BL, a first block waveform BLK0, and a second block waveform BLKm. In one embodiment, the first block waveform BLK0 includes drain select gate signal DSG0, word line signals WL0[0:n], source select gate signal SSG0 and source line signal SL0. The second block waveform BLKm includes drain select gate signal DSGm, word line signals WLm[0:n], source select gate signal SSGm and source line signal SLm. The clock waveforms BL, BLK0, BLKm illustrate an MPS operation using systems, devices, and/or architectures illustrated in FIG. 1 through FIG. 7.

Referring back to FIG. 8, the diagram shows an exemplary waveform associated to various signals such as BL DSG0, WL0[0:n], SSG0, and SL0 in accordance with an MPS operation. First, the page buffer loads the bit line or BL voltages to the cell string of the BLK0. At the t0 time period, the bit lines for programming and inhibit are applied with 0V and VDD, respectively. The DSG0 is applied with VDD to let the bit line voltages to enter the BLK0's cell string. The SSG0, at t0, is set to 0V to turn off the source select gate or SSG and the SL0 is set to VDD. At t1 time period, the selected WL in the BLK0 is ramped up to a high voltage, Vpgm (programming voltage), such as 18-20V for programming, and all the unselected WLs in BLK0 are ramped to a medium high voltage, Vpass (passing voltage), such as 8-10V. Note that Vpass maintains the channel region of all the unselected WLs' cells to a medium high voltage (“Vmh”) around 7-8V by self-channel-boosting. Depending on the applications, WL can ramp up to Vpgm from VDD or Vss. Vss, for example, can be zero (0) volt, ground, and/or negative voltages based on the applications.

For the bit lines that are applied with 0V, the channel region's voltage will be discharged to 0V through the DSG0 to the bit lines. Zero voltage at BL causes high electric field between the selected WL and the channel region, thus causes electrons to inject from the channel region into the floating gate by ‘Fowler-Nordheim Tunneling’ mechanism. Injection to the floating gate increases the cell's threshold voltage (Vt) thus the cell is programmed to an off-cell (data ‘0’). For other bit lines that are applied with VDD, the DSG0 is turned off thus the charge coupled by the WL trapped inside the channel region. The channel region thus remains the medium high voltage 7-8V. The medium high voltage reduces the electric field between the selected WL and the channel region, so electrons will not inject into the floating gate and the cell remains at low Vt and read as an on-cell (data ‘1’). The channel regions, in one example, are referred to NAND flash memory strings wherein each string includes multiple transistors arranged in a channel-like serial connection between the sources terminals and drain terminals.

After the BLK0's channel region voltages are set to either 0V or 7-8V, the DSG0 is switched to 0V to turn off the drain select gates of BLK0. Once the DSG0 is turned off, the channel region of BLK0 will remain the same 0V or 7-8V, and the voltage is ‘trapped’ inside the channel region. In one aspect, the channel is able to trap both 0V for programmed bit line or 7-8V for inhibit bit lines. It should be noted that the channel voltage will gradually leak away through cells' P-N junction leakage. For a channel to dissipate or leak away 1V through the P-N junction can take 50 to 100 ms.

Since the junction leakage current is generally 1 pA (picoampere) range and the junction capacitance of the entire cell string has 10 to 100 fF (femtofarad) range, it may take between 10 ms and 100 ms to leak away 1V. Since each program pulse is approximately 30 μs, the channel voltage will remain almost no change during the entire program pulse. After DSG0 goes to 0V to trap the program and inhibit voltages in the channel region of BLK0, the bit lines voltages can be changed without affecting the BLK0.

The second page buffer's data are subsequently applied to the bit lines and the same voltage setup sequence as above-described relating to BLK0 is repeated for BLK1. The BLK1's DSG1 is applied with VDD to allow the bit line voltages enter the cell string of the BLK1. The selected word line in BLK1 is pulled up to 18-20V and the unselected word lines in BLK1 are applied with 8-10V to couple the channel regions to 0V or 7-8V according to the bit lines voltages. DSG1 subsequently goes to 0V to isolate the channel region of BLK1, and then the next page buffer's data can be applied to the bit lines and loaded to the next block. This sequence can be repeated for multiple blocks until all the page buffers' data are loaded.

After all the page buffers' data are loaded and trapped inside the channel region of multiple blocks, a timing control circuit counts the program pulse, such as 30 μs, as shown in t7-t8 time periods in FIG. 8. Since all the selected pages are programmed simultaneously, the overall programming time is drastically reduced. It should be noted that during the program time, all the bit lines can be 0V, VDD, or floating because the DSG of all the blocks are turned off. In an alternative embodiment, VDD or voltage higher than VDD is applied to all the bit lines to reduce the voltage stress of the DSG which may also reduce the punch-through leakage current of DSG.

During an MPS operation, loading multiple page buffers' data to multiple blocks generally takes 1 or less than 1 μs. Compared with 30 μs program pulse, loading time from page buffer to blocks is small. To ramp up the selected word line, the steps or three steps such as VDD, 10V, and then 18-20V can be used to ramp up the WLs. It should be noted that although the above description and FIG. 8 shows individual SSG0-SSGm and SL0-SLm for each block, the array can use common SSG or common SL for all the blocks.

FIG. 9A is a clock waveform diagram 900 illustrating an alternative MPS operation in accordance with one embodiment of the present invention. The clock diagram 900 is similar to the clock diagram 800 shown in FIG. 8 except that the waveforms of SSG and SL are different at t8 time period. At t8, SSG0-SSGm are applied with VDD, and SL0-SLm are all applied with 0V. The word lines are subsequently discharged one after one according to the sequence from WL0 (near the DSG side) to WLn (near the SSG side). To maintain SSG at VDD and SL at 0V should push hot carriers in the channel to SL whereby the cells reliability in general can be improved.

It should be noted that although the above description of embodiment applies VDD to the bit lines and source lines during the data loading and program operation, it is not necessary to limit the voltage at VDD. Any voltage higher than VDD can also be applied to the bit lines and source lines without affecting performance of MPS operation. For example, the page buffer and source line circuit may use high-voltage device to sustain the voltage higher than VDD. Note that self-channel-coupling program-inhibit works well for VDD from 3V to 5V. However, when VDD is below 2V, the channel's initial voltage is too low (<1V), thus the coupled voltage may not be high enough to effectively inhibit the programming. To handle low VDD, the selected block channel region may be applied with a higher initial voltage before the channel coupling takes place.

FIG. 9B is a clock waveform diagram 950 illustrating an alternative MPS operation in accordance with one embodiment of the present invention. The clock diagram 950 is similar to the clock diagram 900 shown in FIG. 9A except that the diagram 950 includes a preset cycle. During t0-t2, all the cell strings of BLK0-BLKm are ‘PRESET’ to the ‘INHIBIT’ condition by applying VDD to the bit lines, and all the drain select gates DSG0-DSGm to pass VDD voltage from the bit lines to all the BLK0-BLKm's cell strings. At t1 time, all the word lines, WL0[0:n]-WLm[0:n], are ramped up to Vpgm and Vpass together. Because all the cell strings are preset to inhibit condition, none of the cell strings will be programmed at this time. At t3-t6, the bit line is applied with the data for BLK0 and the drain select gate DSG0 is applied with a pulse 952 to load the data into BLK0's cell string. The similar sequence is repeated to load all the data for BLK0-BLKm. At t10, the cell strings of BLK0-BLKm are programmed together to save the programming time.

FIG. 10 and FIG. 11A are clock waveforms diagram 1000 and 1100 illustrating an alternative MPS operation in accordance with one embodiment of the present invention. The clock waveform diagram 1000 or 1100 is similar to the clock waveform diagram 800 shown in FIG. 8 except that the waveforms of DSG and SSG are different at t1 and t2. At t0 time, the first selected block, BLK0's SGS0 and SL0 are applied with a medium high voltage (Vmh) such as 4-5V. Application of medium high voltage will charge the cell string's channel region to 2-3V depending on the on-cell's Vt. At t1 time, the selected WL and unselected WLs are ramped to Vpgm (18-20V) and Vpass (8-10V), respective, to couple the cells' channel region to 7-8V. The SGS0 then is pulled low to 0V to turn off the source select gates. The DSG0 is driven to VDD to turn on the drain select gates, and the channel region is discharged to 0V if the bit lines are applied with 0V, or remain the coupled 7-8V if the bit lines are applied with VDD. After the channel voltages are set, the DSG0 goes to 0V to turn off the drain select gates and isolate the BLK0 from bit lines. The next page buffer's data can be applied to bit lines, and the next select block's channel voltages can be set. This operation can be repeated to load multiple blocks. After all the page buffers' data are loaded to the selected blocks, the program time can start.

It should be noted that if the array uses individual SSG0-SSGm and SL0-SLm, each block's channel initial voltage can be set block by block as shown in FIG. 10. However, if the array uses common SSG and SL, it can pull the common SSG and SL to Vmh at t0 time to charge all the blocks' channel region, and then pull low common SSG to 0V at t2 time, as shown in FIG. 11A. This will cause the initial voltage charged from SL to be trapped in the channel region, to allow the selected blocks' word lines perform self-channel-boosting inhibit.

FIG. 10 further illustrates that the SSG0 or SSGm goes low after the word lines ramp to Vpgm or Vpass. According to another embodiment of the invention, the SSG0-SSGm can go low to 0V before the word lines ramp to Vpgm or Vpass. Since the channel voltage is trapped after SSG0-SSGm go low, the self-channel-boosting inhibit will work well in this embodiment as well. According to FIG. 10, the DSG0 or DSGm goes high after the word lines ramp to Vpgm or Vpass. Alternatively, the DSG0-DSGm can go to VDD (high) before the word lines ramp to Vpgm or Vpass. SSG, however, should go low before DSG goes high, otherwise it will cause leakage current from SL to BL that are applied with 0V.

FIG. 11B is a clock waveform diagram 1150 illustrating an alternative MPS operation in accordance with one embodiment of the present invention. The clock diagram 1150 is similar to the clock diagram 950 shown in FIG. 9B except that the waveforms of SSG and SL are different. During t0-t2, the cell strings of BLK0-BLKm are preset to the inhibit condition by source select gates SSG0-SSGm and source lines SL0-SLm, rather than the drain select gates DSG0-DSGm and bit lines as shown in FIG. 9B. The SSG0-SSGm and SL0-SLm are applied with a medium high voltage (Vmh) which may be VDD or other voltage higher than VDD.

The exemplary aspect of the present invention includes various processing steps, which will be described below. The steps of the aspect may be embodied in machine or computer executable instructions. The instructions can be used to direct a general purpose or special purpose system, which is programmed with the instructions, to perform the steps of the exemplary aspect of the present invention. Alternatively, the steps of the exemplary aspect of the present invention may be performed by specific hardware components that contain hard-wired logic for performing the steps, or by any combination of programmed computer components and custom hardware components.

FIG. 12 is a flow chart 1200 illustrating a process for an MPS in accordance with one embodiment of the present invention. At block 1202, the process of MPS activates a first DSG signal a first clock cycle. In one embodiment, activating a first DSG signal includes driving a high voltage on a first source line for multiple clock cycles while maintaining a low voltage on a first source select gate for multiple clock cycles.

At block 1204, first data from a bit line (“BL”) is loaded to a nonvolatile memory page of a first memory block in response to activation of the first DSG signal. In one aspect, loading first data from the BL to the nonvolatile memory page includes pushing data from the BL to NAND nonvolatile memory cells organized in a string.

At block 1206, the first DSG signal is deactivated and a second DSG signal is subsequently activated during a second clock cycle. In one embodiment, deactivating the first DSG signal and activating a second DSG signal includes logically disconnecting the BL from the nonvolatile memory page of the first memory block.

At block 1208, second data from the BL is loaded to a nonvolatile memory page of a second memory block in response to activation of the second DSG signal. In one embodiment, the process is capable of injecting data from the BL to NAND nonvolatile memory cells which are organized in a string configuration. After the second DSG signal is deactivated, the process activates a third DSG signal and a third data is subsequently loaded from the BL to a nonvolatile memory page of a third memory block in response to activation of the third DSG signal.

At block 1210, the first data is written to a nonvolatile memory cell in the nonvolatile memory page of the first memory block addressed by one of a first set of word lines (“WLs”) fed to the first memory block during a third clock cycle. The second data is programmed into a nonvolatile memory cell in the nonvolatile memory page of the second memory block addressed by one of a second set of WLs fed to the second memory block during the third clock cycle. The third data is written to a nonvolatile memory cell in the nonvolatile memory page of the third memory block addressed by one of a third set of WLs fed to the third memory block. Note that programming first data, second data, and third data into their corresponding nonvolatile memory cells can occur concurrently. Also, the process of programming first data, second data, and third data into their corresponding nonvolatile memory cells can occur in a cascade sequence. The cascade sequence refers to when the second data begins to be written into its corresponding memory cells while the first data is still being written into its corresponding memory.

FIG. 13 is a flow chart 1300 illustrating an alternative process of MPS operation in accordance with one embodiment of the present invention. At block 1302, the process activates a first DSG signal during a first clock cycle. In one example, a high voltage is driven onto a first source line for multiple clock cycles and maintaining a low voltage on a first source select gate for multiple clock cycles.

At block 1304, a first data is loaded from a BL to a nonvolatile memory page of a first block in response to the activation of the first DSG signal. In one aspect, loading first data from the BL to the nonvolatile memory page of the first memory block includes pushing data from the BL to NAND nonvolatile memory cells organized in a string. Alternatively, after loading the first data from the BL to the nonvolatile memory page of the first memory block, the data from the BL is pushed to metal-oxide-semiconductor (“PMOS”) based nonvolatile memory cells organized in a string.

At block 1306, one of a first set of WLs is driven to a selected voltage allowing writing the first data to a nonvolatile memory cell in the nonvolatile memory page of the first block during a second clock cycle.

At block 1308, the first DSG signal is deactivated and a second DSG signal is activated during a third clock cycle.

At block 1310, a second data is loaded from the BL to a nonvolatile memory page of a second block in response to activation of the second DSG signal.

At block 1312, one of a second set of WLs is driven to the selected voltage allowing writing the second data to a nonvolatile memory cell in the nonvolatile memory page of the second block during a fourth clock cycle while the one of a first set of WLs is at the selected voltage. In one example, the process further includes deactivating the second DSG signal and activating a third DSG signal during the fifth clock cycle and loading third data from the BL to a nonvolatile memory page of a third block in response to activation of the third DSG signal. Alternatively, the method further includes driving one of a third set of WLs to the selected voltage allowing writing the third data to a nonvolatile memory cell in the nonvolatile memory page of the third block during a sixth clock cycle while the one of the first set of WLs and the one of the second set of WLs are at the selected voltage.

FIG. 14 is a flow chart 1400 illustrating an exemplary process operating MPS in accordance with one embodiment of the present invention. At block 1402, an array of NAND flash memory cells is provided.

At block 1404, once the bit line voltages are loaded to a first cell string from a page buffer, a first DSG is enabled. After selecting a WL of the first cell string, the first DSG is disabled. In one embodiment, the loading bit line voltages to the first cell string of the first block includes loading the bit line voltages to the first cell string of the first block from the page buffer by applying a program/inhibit signal to a bit line of the first cell string, enabling the first drain select gate of the first cell string, applying a source select gate of the first cell string with Vss and applying a source line of the first cell string with VDD, ramping the selected word line of the first cell string with a high voltage for programming (Vpgm) and ramping all the unselected word lines with a medium high voltage (Vpass), thereby coupling the channel region of the first cell string to a medium high voltage, and disabling the drain select gate of the first cell string, thereby trapping the voltage for both a programmed bit line and an inhibited bit line in the channel region of the first cell string.

In another embodiment, the method further includes applying the source select gate and the source line of the first cell string with a medium high voltage (Vmh) before ramping the selected word line of the first cell string with a high voltage for programming (Vpgm) and ramping all the unselected word lines with a medium high voltage (Vpass) and applying Vss to the source select gate of the first cell string before enabling the first drain select gate of the first cell string. Alternatively, the method further includes providing an array of NAND flash memory cells comprising common source select gates and common source lines for every memory cell string, applying the source select gate and the source line of all the flash memory cells with a medium high voltage (Vmh) before ramping the selected word line of the first cell string with a high voltage for programming (Vpgm) and ramping all the unselected word lines with a medium high voltage (Vpass) and applying Vss to the source select gate of all the flash memory cells before enabling the first drain select gate of the first cell string.

At block 1406, bit line voltages are loaded to a second cell string of a successive block from the page buffer, a second drain select gate is enabled, a second word line of the second cell string is selected, and the second drain select gate is disabled.

At block 1408, the above steps are repeated until the page buffer's data are loaded.

At block 1410, all the selected word lines of the multiple blocks are programmed simultaneously. In one aspect, the number of multiple blocks programmed simultaneously is eight. Alternatively, the method can further include discharging a channel region of all the cell strings by applying Vss to the word lines of all the cell strings. In one embodiment, discharging the channel region can include discharging a channel region of all the cell strings by first applying VDD to a source select gate of all the cell strings, applying Vss to all the source lines of all the cell strings, and applying Vss to the word lines of all the cell strings. In another aspect, programming all the selected word lines of the multiple blocks simultaneously includes counting a program pulse with a timing control circuit for programming all the selected pages of the multiple blocks simultaneously.

FIG. 15 is a flow chart 1500 illustrating another alternative example of an MPS operation in accordance with one embodiment of the present invention. At block 1502, bit line voltages are loaded to the first cell string by applying a program/inhibit signal to a bit line of the first cell string.

At block 1504, a DSG of the first cell string is enabled, and a SSG of the first cell string, at block 1506, is applied with Vss and a source line of the first cell string is applied with VDD.

At block 1508, a selected word line of the first cell string is ramped with Vpgm and the unselected word lines are ramped with a Vpass, thereby coupling the channel region of the first cell string to a medium high voltage.

At block 1510, the drain select gate of the first cell string is disabled, thereby trapping the voltage for both a programmed bit line and an inhibited bit line in the channel region of the first cell string. In one aspect, the method further includes discharging a channel region of all the cell strings by applying Vss to the word lines of all the cell strings. In one embodiment, discharging the channel region includes discharging a channel region of all the cell strings by first applying VDD to a source select gate of all the cell strings, applying Vss to all the source lines of all the cell strings, and applying Vss to the word lines of all the cell strings.

At block 1512, the above steps are repeated until all data is loaded into the memory blocks.

At block 1514, all the selected word lines of the multiple blocks are programmed simultaneously. In one aspect, the number of multiple blocks programmed simultaneously is eight. Alternatively, the method can further include discharging a channel region of all the cell strings by applying Vss to the word lines of all the cell strings. In one embodiment, discharging the channel region can include discharging a channel region of all the cell strings by first applying VDD to a source select gate of all the cell strings, applying Vss to all the source lines of all the cell strings; and applying Vss to the word lines of all the cell strings. In another aspect, programming all the selected word lines of the multiple blocks simultaneously includes counting a program pulse with a timing control circuit for programming all the selected pages of the multiple blocks simultaneously.

FIG. 16 shows an exemplary embodiment of one block 1606 of a 3D NAND flash memory array. The block 1606 includes multiple groups of pages (“page groups”). For example, the block 1606 includes N+1 page groups that comprise a zero^(th) page group 1600 a, a first page group 1600 b, and up to an N^(th) page group 1600 c. Each page group contains multiple cell strings, such as string 1601. Each cell string in a page group is connected to a respective bit line. For example, the string 1601 is connected to bit line (BL[0]) and includes a drain select gate (DSG) 1602, a source select gate (SSG) 1603, and multiple NAND flash memory cells 1604 a-e connected serially. The pages in each page group are defined across multiple cell strings. For example, page group 1600 a comprises multiple pages of which PAGE 0 is defined across the multiple cell strings in page group 1600 a. Likewise, page group 1600 b comprises multiple pages of which PAGE 1 is defined across the multiple cell strings in page group 1600 b. Lastly, page group 1600 c comprises multiple pages of which PAGE N is defined across the multiple cell strings in page group 1600 c.

The drain select gates (DSG) of the strings in each page group are connected to a respective select gate (SG) control signal. For example, the drain select gates in page group 1600 a are connected to the control signal SG[0], the drain select gates in page group 1600 b are connected to SG[1], and continuing on, the drain select gates in page group 1600 c are connected to SG[n]. The drains of the drain select gates are connected to the bit lines BL[0:k]. Each page in a page group is connected to a respective word line (WL). For example, PAGE 0 in page group 1600 a, PAGE 1 in page group 1600 b and other pages up to PAGE N in page group 1600 c are connected to WL[c]. The source select gates (e.g., SSG 1603) are connected to a SSG control signal and a source line (SL) control signal. In various exemplary embodiments, PAGES 0-N of block 1606 can be loaded with different data and programmed simultaneously by applying 20V to the word line (e.g., WL[c]) that connects them together.

In an exemplary embodiment, the 3D NAND flash memory array includes a plurality of blocks that are like block 1606. The array also includes a decoder 1608 and data buffer 1610 connected to all the blocks to provide control signals and data transfers. The decoder 1608 comprises a CPU, processor, logic, registers, memory, firmware, timing components for signal timing, discrete components and/or any other suitable components. The decoder 1608 generates the select gate control signals (SG[0:n]), the word line signals (WL[0:m]), the source select gate signal (SSG), and the select line signal (SL). The data buffer 1610 handles data transfers to and from the blocks of the array. In various embodiments, the decoder 1608 outputs the control signals to program the array in accordance with the methods disclosed herein. For example, the decoder 1608 outputs the control signals to perform simultaneous multiple-page programming as disclosed herein.

FIG. 17 shows exemplary programming operations to program the 3D NAND flash memory block shown in FIG. 16. In an embodiment, the decoder 1608 outputs control signals to implement the operations described below

In a first step 1701 a, the whole-page data (e.g., data for an entire page) is applied to the bit lines BL[0:k]. A selected drain select gate (e.g., SG[0]) (of the page group containing the page to be programmed) is turned on to load the bit line data into the channel regions of the NAND cell strings of the selected page group, as shown in 1702 a and 1702 b. Note that each cell string has a channel region so that each page group has k (number of cell strings) channels. For example, to program PAGE 0 in page group 1600 a, the control signal SG[0] is turned on to allow the data on the bit lines (BL[0:k]) to be loaded into the channels (Channel[0:k]) of the cell strings in page group 1600 a. In an embodiment, 1702 a is for data=0 (BL=0V, channel=0V) and 1702 b is for data=1 (BL=VDD, channel=VDD−Vt). The source select gate SSG and the source line SL are supplied with 0V and VDD, respectively, to turn off the source select gates and thereby maintain the data in the associated channels.

In a second step 1701 b, the selected word line (such as WL[c] to program PAGE 0 for example) is supplied with a program high voltage (Vpgm), such as 15V to 20V. All the unselected word lines (such as WL[1:c−1] and WL[c+1:m] for example) are supplied with a middle-high inhibit voltage (Vinh), such as 8V to 10V.

The voltage on the word lines will couple the channels of the cell strings having data “1” (as shown at 1702 b) to a middle-high voltage (Vch) such as 8V to 10V, as further shown at 1702. The voltage Vch will inhibit the associated cells from being programmed due to insufficient electrical field between the selected word line and the channel.

On the other hand, the channels of the cell strings having data “0” (as shown at 1702 a) will remain at 0V due to the discharge current through the select gate SG[0] to the bit line, which is maintained at 0V. Therefore, these cells will start to be programmed by the programming voltage (Vpgm) on the selected word line.

In the third step 1701 c, the voltages on the word lines are maintained for a certain programming time (Tpgm), such as 10 us to 30 us. Then, the word line voltages are discharged. This completes what is called a ‘program pulse’. Then, a ‘program-verify’ operation takes place to verify the threshold voltage (Vt) of the programmed cells. The program pulse and program-verify may be repeated for multiple iterations until all the programmed cells reach the target Vt.

FIG. 18 shows exemplary programming operations to program the 3D NAND flash memory block shown in FIG. 16. In an embodiment, the decoder 1608 outputs control signals to implement the operations described below

In a first step 1801 a, all the cell strings of all the page groups in block 1606 are loaded with ‘inhibit’ data. To do so, all the bit lines BL[0:k] are supplied with VDD (data 1), and all the select gates SG[0:n] of all the page groups are pulsed to load VDD into all the channels of all the cell strings in each page group, as shown in 1802 a through 1802 b. The source select gate (SSG) and the source line (SL) are supplied with 0V and VDD, respectively, to turn off the source select gates and thereby maintain the inhibit data in the channels.

In a second step 1801 b, the selected word line (such as WL[c] for example) is supplied with the program high voltage (Vpgm), such as 15V to 20V. All the unselected word lines (such as WL[1:c−1] through WL[c+1:m] for example) are supplied with a middle-high inhibit voltage (Vinh), such as 8V to 10V.

The voltages on the word lines will couple all the channels of the cell strings to the middle-high voltage (Vch), such as 8V to 10V. This voltage will inhibit the cells from being programmed due to insufficient electrical field between the selected word line and the channel. It should be noted that the channel voltage will not leak away because the drain select gates (SG[0]-SG[n]) are turned off. In another embodiment, the drain select gates (SG[0]-SG[n]) may remain at VDD in this step, while (BL[0]-BL[k]) remain at VDD. This will cause the select gates to be ‘reverse-biased’ thus the channel voltage will not leak away.

In step 1801 c, the data for multiple pages are loaded in sequence. The data 1803 a for the zero^(th) page (PAGE 0) is applied to the bit lines (BL[0:k]) and the first select gate (SG[0] associated with the page group 0) is pulsed to load the data into the channels (Channel 0 [0:k]) of the cell strings of the selected (zero^(th)) page group. The bit lines with 0V (data 0) will discharge the channels of the associated strings to 0V, as shown at 1804 a. The bit lines with VDD (data 1) will not discharge the channels of the associated strings, due to the select gate being reverse-biased, thus these cell string channels will remain at the inhibit voltage (Vch), as shown at 1804 b. The selected word line (e.g., WL[c]) is supplied with Vpgm, such as 15V to 20V. For the cells on PAGE 0 with 0V channel voltage, the electric field between the cells' gate (which is connected to WL[c], 15V to 20V) and their channel (which is 0V) will cause electrons to inject from their channel to the charge storage element of the cells, such as a floating gate or a charge-trapping layer for example. This will increase the cells' threshold voltage (Vt). This will cause the cells of PAGE 0 having the voltage level 0V shown at 1804 a to begin programming.

For those cells on PAGE 0 with channel voltage Vch (8V to 10V), their channel voltage will reduce the electric field between the cells' gate (15V to 20V) and the channel (8V to 10V). The electric field is not high enough to cause electrons to inject from the channel into the storage element. Thus, it causes the cells of PAGE 0 having the voltage level Vch shown at 1804 b to be inhibited. For the unselected word lines, WL[0:c−1] and WL[c+1:m], because their word line voltage (Vinh) is only 8V to 10V, it is not enough to cause electrons to inject, thus the cells on the unselected word lines are all inhibited.

After PAGE 0 is loaded and programming has begun, the select gate SG[0] is turned off. The data for the next page (PAGE 1) is applied to the bit lines, and the next select gate (e.g., SG[1] associated with the page group 1) is pulsed to load the data to (Channel 1 [0:k]) and begin programming that page. These steps are repeated until the data 1803 b for the last page (PAGE N) is loaded to Channel N [0:k] and the channel voltages for the last page are set to 0V (as shown at 1805 a) for cells to be programmed and Vch (as shown at 1805 b) for cells to be inhibited.

It should be noted that the above described programming operations can be utilized to load data to any number of pages, in any random sequence. It is not required to load all the pages, nor in any particular order. The channel(s) of the unloaded pages will remain at the inhibit voltage (Vch), thus the cells of the unloaded pages will not be affected by the programming operation.

In step 1801 d, after the data for multiple pages are loaded and programming has begun, the voltages of the word lines will be maintained for a certain time (Tpgm), such as 10 us to 30 us to allow all the pages (0 to N) to continue programming in parallel. Then, the word line voltages are discharged. This completes what is called a ‘program pulse’ and during this time the cells in the multiple selected pages complete their programming operation in parallel. Then, a ‘program-verify’ operation takes place to verify the Vt of the programmed cells. The program pulse and program-verify may be repeated for multiple iterations until all the programmed cells reach the target Vt.

Utilizing NAND Blocks as DRAM Blocks to Increase Data Buffer Size

The disclosed exemplary embodiments operate to simultaneously program multiple pages of the 3D NAND flash memory block shown in FIG. 16. However, to facilitate implementation, it may be desirable to increase the data buffer's size to store the programming data for the multiple pages. To address this issue, exemplary embodiments are now disclosed to store the programming data for multiple pages without increasing the size of the existing data buffer (e.g., data buffer 1610).

FIG. 19 shows an exemplary embodiment of a 3D NAND flash memory array that includes multiple NAND blocks, such as block 1901 a and block 1901 b. As discussed above, each block contains multiple page groups and each page group contains multiple pages. For example, the first block 1901 a contains page groups 1902 a-n, and the second block 1901 b contains page groups 1903 a-n. For example, the page groups 1902 a-n contain NAND PAGE 0 through NAND PAGE N. Furthermore, each block has individual word lines, select gates, and source lines. Therefore, when one block is performing a programming operation, its word lines' and bit lines' voltage will not affect the other blocks.

An approach to use a NAND flash cell string as a DRAM cell is disclosed in U.S. Pat. No. 9,761,310 B2 filed by the same inventor of this application. For example, the U.S. Pat. No. 9,761,310 discloses how a NAND cell string can be used as a DRAM cell by turning off the source select gate to make the cell string act as a MOS capacitor. Using this approach, an unselected NAND block can be configured to act as multiple pages of DRAM cells to store programming data to program NAND pages in a selected NAND block. For example, when a NAND block is selected to perform the multiple-page programming as disclosed above, another unselected NAND block can be used as DRAM to temporarily store the program data to be programmed into the multiple NAND pages.

Referring again to FIG. 19, it will be assumed the NAND block 1901 a (having page groups 1902 a-n) is selected for multiple-page programming. The unselected NAND block 1901 b (having page groups 1903 a-n) may be used as DRAM block to temporarily store multiple pages of data for programming pages of block 1901 a. To configure the unselected NAND block 1901 b as a DRAM block, the source select gate (SSG1) is turned off to isolate the cell strings from the source line (SL1). This turns each cell string in block 1901 b into a DRAM cell. Next, pulses are applied to (SG1[0] to SG1[n]), to load data for multiple pages from the bit lines into the cell strings in the block 1901 b. For example, each pulse stores data from the bit lines into a corresponding page group of the block 1901 b. Thus, each of the page groups 1903 a-n stores one page of data. After all the page data is loaded into the page groups of the DRAM block 1901 b, the data to be programmed in a selected page of the selected NAND block 1901 a can be fetched from the corresponding DRAM page of block 1901 b.

In an exemplary embodiment, to fetch the data from the DRAM block 1901 b, a pulse is applied to SG1[0] to cause charge-sharing between the cell strings of page group 1903 a and the bit line capacitance. DRAM-type sense amplifiers (not shown) that are connected to the bit lines in the edge of the array may be used to sense the bit line voltage to determine the data. Then, in the selected NAND block (1901 a), SG0[0] is pulsed to load the data from the sense amplifiers to the cell strings of page group 1902 a. As a result, the data in DRAM page 1903 a is loaded into the NAND page group 1902 a. This procedure may be repeated to load multiple pages of data from DRAM pages (1903 a-n) into the channels of the NAND page groups (1902 a-n), respectively. Once the data is in the channels of the NAND page groups (1902 a-n), the programming operations discuss with respect to FIG. 18 can be used to complete the simultaneous multiple-page programming of the NAND block 1901 a.

Utilizing NAND Blocks as DRAM Blocks to Program NAND Multi-Level Cells

It should be noted that for the single-level cell (SLC) case, the number of DRAM pages to store data in the DRAM block 1901 b is the same as the number of pages to be programmed in the NAND block 1901 a. For the cases of multi-level cell (MLC) or tri-level cell (TLC), the number of DRAM pages to store data in the DRAM block 1901 b may be multiple times the number of pages to be programmed in the NAND block 1901 a. For example, for the case of 2 bits/cell, two DRAM pages store data in the DRAM block 1901 b to program one page in the NAND block 1901 a. In another embodiment, the two data bits are stored in two different unselected DRAM blocks.

FIG. 20 shows an exemplary embodiment of a 3D NAND flash memory array that includes multiple NAND blocks, such as block 1901 a, block 1901 b, and block 1901 c. As discussed above, each block contains multiple page groups and each page group contains multiple pages. For example, the first block 1901 a contains page groups 1902 a-n, the second block 1901 b contains page groups 1903 a-n, and the third block 1901 c contains page groups 1904 a-n. For example, the page groups 1902 a-n contain NAND PAGE 0 through NAND PAGE N. Furthermore, each block has individual word lines, select gates, and source lines. Therefore, when one block is performing a programming operation, its word lines' and bit lines' voltage will not affect the other blocks.

The array shown in FIG. 20 provides multiple-page programming of MLC strings. For example, assuming NAND block 1901 a is to be programmed with 2 bits/cell. In this case, two DRAM pages are used to store the program data (D0 and D1) in DRAM blocks 1901 b and 1901C, respectively. For example, the unselected NAND block 1901 b is configured as DRAM block 1 to store D0 data and unselected NAND block 1901 c is configured as DRAM block 2 to store D1 data. Thus, the ML cells of NAND PAGE 0 in selected block 1901 a is programmed with D0 data from DRAM block 1 PAGE 0, and programmed with D1 data from DRAM block 2 PAGE 0. For example, the techniques described above to fetch data from the DRAM blocks is used here to fetch the D0 and D1 data for MLC programming. Thus, NAND PAGES 0-N in selected block 1901 a are programmed with data from DRAM block 1 PAGES 0-N and DRAM block 2 PAGES 0-N. It should be noted that the D0 and D1 data can be stored in any DRAM page group and in any page group order so that the use of DRAM pages to programming data is not limited to the above example.

In an embodiment, the data stored in the DRAM block 1901 b can be also fetched during program-verification to compare with the data in the programmed cells in block 1901 a. The data may also be updated according to the program-verify result (especially for MLC and TLC case) to determine the program data for the next program pulse.

FIG. 21A shows an exemplary embodiment of a 3D NAND flash memory array architecture having a page buffer for data input and output. The array architecture shown in FIG. 21A includes multiple 3D NAND blocks 2101 a-h and page buffer 2102, which includes data latches, sense amplifiers, and bit line drivers. The page buffer 2102 is connected to the blocks 2101 a-h through the bit lines BL[0:k]. In this way, if a NAND block is configured at a DRAM block for data storage, the data for the DRAM block can be first loaded into the page buffer 2102, and then the data can be programmed from the page buffer 2102 into a selected NAND block using the same bit lines.

FIG. 21B shows another exemplary embodiment of a 3D NAND flash memory array architecture having a page buffer for data input and output. In the array architecture shown in FIG. 21B, the page buffer 2102 may be located between a first group of blocks 2101 a-d and a second group of blocks 2101 e-h. The page buffer 2102 connects to the first and second group of blocks using different bit lines, such as BL0[0:k] and BL1[0:k]. In this way, the page buffer may use one group of blocks as DRAM blocks while the other group of blocks are programmed as NAND blocks.

While particular embodiments of the present invention have been shown and described, it will be obvious to those of ordinary skills in the art that based upon the teachings herein, changes and modifications may be made without departing from this exemplary embodiment(s) of the present invention and its broader aspects. Therefore, the appended claims are intended to encompass within their scope all such changes and modifications as are within the true spirit and scope of this exemplary embodiment(s) of the present invention. 

What is claimed is:
 1. A method for multiple-page programming of a 3D NAND flash memory array having a block that includes a plurality of page groups and each page group includes a plurality of cell strings that form a plurality of pages, the method comprising: deactivating drain select gates (DSGs) and source select gates (SSG) of the block; applying a programming voltage to a selected word line that is coupled to a selected page in each page group; applying an inhibit middle high voltage to unselected word lines that are coupled to other pages in each page group; repeating multiple programming operations while maintaining the word line voltage levels from a first programming operation to a last programming operation, wherein the multiple programming operations program a selected page in each of two or more page groups, respectively, and wherein each programming operation comprises: loading data onto bit lines coupled to the page groups; and pulsing a drain select gate associated with a selected page group to begin programming the data on the bit lines into the selected page of the selected page group; and maintaining the word line voltage levels after a last programming operation for an additional time interval to complete the programming operations.
 2. The method of claim 1, further comprising pre-charging the cell strings of the block by applying VDD to all the bit lines and to all the drain select gates of the block before the operation of applying the programming voltage to the selected word line.
 3. The method of claim 1, further comprising pre-charging the cell strings of the block by applying VDD to all the bit lines and drain select gates of the block, and then applying Vss to all the drain select gates of the block, before the operation of applying the programming voltage to the selected word line.
 4. The method of claim 1, further comprising pre-charging the cell strings of the block by performing operations of: applying VDD or a higher voltage to all the source lines and source select gates of the block; applying Vss to all the drain select gates of the block; performing the above operations before the operation of applying the programming voltage to the selected word line; and applying Vss to a source select gate of the block either before or after the operation of applying the programming voltage to the selected word line.
 5. The method of claim 1, wherein each cell string comprises a plurality of NAND nonvolatile memory cells.
 6. The method of claim 1, wherein the programming voltage is in a range of 15-20 volts and the inhibit middle high voltage is in a range of 8-10 volts.
 7. The method of claim 1, further comprising obtaining the data from a second block that includes a plurality of second page groups, and wherein one or more of the second page groups is configured as a DRAM page.
 8. A nonvolatile memory device, comprising: a 3D NAND flash memory array having a block that includes a plurality of page groups and each page group includes a plurality of cell strings that form a plurality of pages; and a decoder coupled to the block and configured to provide multiple-page programming by performing operations of: deactivating drain select gates (DSGs) and source select gates (SSG) of the block; applying a programming voltage to a selected word line that is coupled to a selected page in each page group; applying an inhibit middle high voltage to unselected word lines that are coupled to other pages in each page group; repeating multiple programming operations while maintaining the word line voltage levels from a first programming operation to a last programming operation, wherein the multiple programming operations program a selected page in each of two or more page groups, respectively, and wherein each programming operation comprises: loading data onto bit lines coupled to the page groups; and pulsing a drain select gate associated with a selected page group to begin programming the data on the bit lines into the selected page of the selected page group; and maintaining the word line voltage levels after a last programming operation for an additional time interval to complete the programming operations.
 9. The device of claim 8, wherein the decoder pre-charges the cell strings of the block by applying VDD to all the bit lines and to all the drain select gates of the block before the operation of applying the programming voltage to the selected word line.
 10. The device of claim 8, wherein the decoder pre-charges the cell strings of the block by applying VDD to all the bit lines and drain select gates of the block, and then applying Vss to all the drain select gates of the block, before the operation of applying the programming voltage to the selected word line.
 11. The device of claim 8, wherein the decoder pre-charges the cell strings of the block by performing operations of: applying VDD or a higher voltage to all the source lines and source select gates of the block; applying Vss to all the drain select gates of the block; performing the above operations before the operation of applying the programming voltage to the selected word line; and applying Vss to a source select gate of the block either before or after the operation of applying the programming voltage to the selected word line.
 12. The device of claim 8, wherein each cell string comprises a plurality of NAND nonvolatile memory cells.
 13. The device of claim 8, wherein the programming voltage is in a range of 15-20 volts and the inhibit middle high voltage is in a range of 8-10 volts.
 14. The device of claim 8, wherein the data buffer obtains the data from a second block that includes a plurality of second page groups, and wherein one or more of the second page groups is configured as a DRAM page.
 15. A method for multiple-page programming of a 3D NAND flash memory array having a block that includes a plurality of page groups and each page group includes a plurality of cell strings that form a plurality of pages, and wherein the page groups in the block are coupled to a common set of word lines, the method comprising: applying a programming voltage to a selected word line and an inhibit middle high voltage to unselected word lines; pulsing a first drain select gate associated with a first page group to begin programming bit line data into a page of the first page group that is connected to the selected word line; pulsing a second drain select gate associated with a second page group to begin programming bit line data into a page of the second page group that is connected to the selected word line; and maintaining the word line voltage levels associated with the first and second page groups beginning from the pulsing the first drain select gate to the pulsing of the second drain select gate and wherein the word line voltage levels are maintained after the pulsing of the second drain select gate for an additional time interval to complete programming operations.
 16. The method of claim 15, further comprising pre-charging the cell strings of the block by applying VDD to all the bit lines and to all the drain select gates of the block before the operation of applying the programming voltage to the selected word line.
 17. The method of claim 15, further comprising pre-charging the cell strings of the block by applying VDD to all the bit lines and drain select gates of the block, and then applying Vss to all the drain select gates of the block, before the operation of applying the programming voltage to the selected word line.
 18. The method of claim 15, further comprising pre-charging the cell strings of the block by performing operations of: applying VDD or a higher voltage to all the source lines and source select gates of the block; applying Vss to all the drain select gates of the block; performing the above operations before the operation of applying the programming voltage to the selected word line; and applying Vss to a source select gate of the block either before or after the operation of applying the programming voltage to the selected word line. 